Datasheet APT40GF120J RD (APT) - 2
| Manufacturer | APT |
| Description | Fast IGBT 1200V 60A |
| Pages / Page | 8 / 2 — APT40GF120JRD. DYNAMIC CHARACTERISTICS. Symbol. Characteristic. Test … |
| File Format / Size | PDF / 118 Kb |
| Document Language | English |
APT40GF120JRD. DYNAMIC CHARACTERISTICS. Symbol. Characteristic. Test Conditions. MIN. TYP. MAX. UNIT. Capacitance. Gate Charge
Model Line for this Datasheet
Text Version of Document
APT40GF120JRD DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C Input Capacitance
Capacitance
3450 4200 ies VGE = 0V C Output Capacitance oes 330 470 pF VCE = 25V C Reverse Transfer Capacitance res f = 1 MHz 230 350 Q Total Gate Charge 3
Gate Charge
g 325 490 VGE = 15V Q Gate-Emitter Charge ge 35 40 nC VCC = 0.5V CES Q Gate-Collector ("Miller ") Charge gc I 195 300 C = I C2 t Turn-on Delay Time
Resistive Switching (25°C)
d(on) 47 94 V = 15V t Rise Time GE r 178 360 V ns CC = 0.5V CES t Turn-off Delay Time d(off) 320 480 IC = I C2 t Fall Time R f G = 10Ω 190 380 t Turn-on Delay Time d(on) 45 90 tr Rise Time
Inductive Switching (150°C)
102 210 ns V = 0.66V t Turn-off Delay Time CLAMP(Peak) CES d(off) 440 880 VGE = 15V tf Fall Time 102 210 IC = I C2 E Turn-on Switching Energy R on G = 10Ω 6.4 13 T = +150°C E Turn-off Switching Energy J off 5.6 12 mJ E Total Switching Losses ts 12.0 25 t Turn-on Delay Time d(on)
Inductive Switching (25°C)
46 100 V = 0.66V t Rise Time CLAMP(Peak) CES r 115 230 V ns GE = 15V t Turn-off Delay Time d(off) 390 790 IC = I C2 t Fall Time R f G = 10Ω 100 210 T = +25°C E Total Switching Losses J ts 10.8 22 mJ gfe Forward Transconductance V 8 CE = 20V, IC = I S C2
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT
Junction to Case (IGBT) 0.32 RΘJC Junction to Case (FRED) 0.66 °C/W R Junction to Ambient 40 ΘJA 1.03 oz W Package Weight T 29.2 gm 10 lb•in Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 N•m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , R = 25Ω, L = 68µH, T = 25°C C C2 GE j 3 See MIL-STD-750 Method 3471 052-6256 Rev B 7-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.
C Input Capacitance
Capacitance
3450 4200 ies VGE = 0V C Output Capacitance oes 330 470 pF VCE = 25V C Reverse Transfer Capacitance res f = 1 MHz 230 350 Q Total Gate Charge 3
Gate Charge
g 325 490 VGE = 15V Q Gate-Emitter Charge ge 35 40 nC VCC = 0.5V CES Q Gate-Collector ("Miller ") Charge gc I 195 300 C = I C2 t Turn-on Delay Time
Resistive Switching (25°C)
d(on) 47 94 V = 15V t Rise Time GE r 178 360 V ns CC = 0.5V CES t Turn-off Delay Time d(off) 320 480 IC = I C2 t Fall Time R f G = 10Ω 190 380 t Turn-on Delay Time d(on) 45 90 tr Rise Time
Inductive Switching (150°C)
102 210 ns V = 0.66V t Turn-off Delay Time CLAMP(Peak) CES d(off) 440 880 VGE = 15V tf Fall Time 102 210 IC = I C2 E Turn-on Switching Energy R on G = 10Ω 6.4 13 T = +150°C E Turn-off Switching Energy J off 5.6 12 mJ E Total Switching Losses ts 12.0 25 t Turn-on Delay Time d(on)
Inductive Switching (25°C)
46 100 V = 0.66V t Rise Time CLAMP(Peak) CES r 115 230 V ns GE = 15V t Turn-off Delay Time d(off) 390 790 IC = I C2 t Fall Time R f G = 10Ω 100 210 T = +25°C E Total Switching Losses J ts 10.8 22 mJ gfe Forward Transconductance V 8 CE = 20V, IC = I S C2
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT
Junction to Case (IGBT) 0.32 RΘJC Junction to Case (FRED) 0.66 °C/W R Junction to Ambient 40 ΘJA 1.03 oz W Package Weight T 29.2 gm 10 lb•in Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 N•m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , R = 25Ω, L = 68µH, T = 25°C C C2 GE j 3 See MIL-STD-750 Method 3471 052-6256 Rev B 7-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.
