Datasheet ADG1233, ADG1234 (Analog Devices)

ManufacturerAnalog Devices
DescriptionLow Capacitance, Triple/Quad SPDT ±15 V/+12 V iCMOS Switches
Pages / Page17 / 1 — Low Capacitance, Triple/Quad SPDT. ±15 V/+12 V. CMOS Switches. Data …
RevisionD
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Document LanguageEnglish

Low Capacitance, Triple/Quad SPDT. ±15 V/+12 V. CMOS Switches. Data Sheet. ADG1233/. ADG1234. FEATURES. FUNCTIONAL BLOCK DIAGRAMS

Datasheet ADG1233, ADG1234 Analog Devices, Revision: D

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Low Capacitance, Triple/Quad SPDT ±15 V/+12 V
i
CMOS Switches Data Sheet ADG1233/ ADG1234 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 pF off capacitance ADG1233 0.5 pC charge injection S1A D1 33 V supply range S1B S3B 120 Ω on resistance D3 Fully specified at ±15 V/+12 V S3A 3 V logic-compatible inputs S2B Rail-to-rail operation D2 S2A Break-before-make switching action 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP LOGIC Typical power consumption (<0.03 μW) APPLICATIONS IN1 IN2 IN3
001
EN
3- 574
Audio and video routing SWITCHES SHOWN FOR A LOGIC 1 INPUT
0
Automatic test equipment
Figure 1.
Data acquisition systems ADG1234 Battery-powered systems S1A S4A D1 D4 Sample-and-hold systems S1B S4B Communication systems S2B S3B D2 D3 S2A S3A LOGIC
038
IN1 IN2 IN3 IN4 EN
3-
SWITCHES SHOWN FOR A LOGIC 1 INPUT
574 0 Figure 2.
GENERAL DESCRIPTION
The ADG1233 and ADG1234 are monolithic iCMOS® analog Unlike analog ICs using conventional CMOS processes, iCMOS switches comprising three independently selectable single-pole, components can tolerate high supply voltages while providing double throw SPDT switches and four independently selectable increased performance, dramatically lowered power consumption, SPDT switches, respectively. and reduced package size. All channels exhibit break-before-make switching action The ultralow capacitance and charge injection of these multiplexers preventing momentary shorting when switching channels. An make them ideal solutions for data acquisition and sample-and- EN input on the ADG1233 and ADG1234 enables or disables hold applications, where low glitch and fast settling are required. the device. When disabled, all channels are switched off. Fast switching speed coupled with high signal bandwidth make the The iCMOS (industrial-CMOS) modular manufacturing process devices suitable for video signal switching. iCMOS construction combines a high voltage complementary metal-oxide semi- ensures ultralow power dissipation, making the devices ideally conductor (CMOS) and bipolar technologies. It enables the suited for portable and battery-powered instruments. development of a wide range of high performance analog ICs
PRODUCT HIGHLIGHTS
capable of 33 V operation in a footprint that no other generation of high voltage devices has been able to achieve. 1. 1.5 pF off capacitance (±15 V supply). 2. 0.5 pC charge injection. 3. 3 V logic-compatible digital input, VIH = 2.0 V, VIL = 0.8 V. 4. 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP.
Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2006–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TERMINOLOGY TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
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