Datasheet BPV11F (Vishay)
| Manufacturer | Vishay |
| Description | Silicon NPN Phototransistor |
| Pages / Page | 5 / 1 — BPV11F. Silicon NPN Phototransistor. FEATURES. DESCRIPTION. APPLICATIONS. … |
| File Format / Size | PDF / 109 Kb |
| Document Language | English |
BPV11F. Silicon NPN Phototransistor. FEATURES. DESCRIPTION. APPLICATIONS. PRODUCT SUMMARY. COMPONENT. Ica (mA). (deg). 0.5 (nm). Note
Model Line for this Datasheet
Text Version of Document
BPV11F
www.vishay.com Vishay Semiconductors
Silicon NPN Phototransistor FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters 12784 • Fast response times • Angle of half sensitivity: = ± 15° • Base terminal connected
DESCRIPTION
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal
APPLICATIONS
and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. • Detector for industrial electronic circuitry, measurement and control
PRODUCT SUMMARY COMPONENT Ica (mA)
(deg) 0.5 (nm)
BPV11F 9 ± 15 900 to 980
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV11F Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA Power dissipation Tamb 47 °C PV 150 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Rev. 1.6, 03-May-13
1
Document Number: 81505 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
Silicon NPN Phototransistor FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters 12784 • Fast response times • Angle of half sensitivity: = ± 15° • Base terminal connected
DESCRIPTION
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal
APPLICATIONS
and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. • Detector for industrial electronic circuitry, measurement and control
PRODUCT SUMMARY COMPONENT Ica (mA)
(deg) 0.5 (nm)
BPV11F 9 ± 15 900 to 980
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV11F Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA Power dissipation Tamb 47 °C PV 150 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Rev. 1.6, 03-May-13
1
Document Number: 81505 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
