Datasheet BDX42, BDX43, BDX44 (Philips) - 3

Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter BDX42 − 60 V BDX43 − 80 V BDX44 − 90 V VCES collector-emitter voltage VBE = 0 BDX42 − 45 V BDX43 − 60 V BDX44 − 80 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 1.25 W Tmb ≤ 100 °C − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 100 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W 1997 Jul 02 3 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT32 DEFINITIONS