Datasheet BZX79 (NXP) - 2
| Manufacturer | NXP |
| Description | Voltage regulator diodes |
| Pages / Page | 12 / 2 — Philips Semiconductors. Product specification. Voltage regulator diodes. … |
| File Format / Size | PDF / 78 Kb |
| Document Language | English |
Philips Semiconductors. Product specification. Voltage regulator diodes. BZX79 series. FEATURES. APPLICATIONS. DESCRIPTION
Model Line for this Datasheet
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Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES
• Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage
k a APPLICATIONS
MAM239 • Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed The diodes are type branded. leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and Fig.1 Simplified outline (SOD27; DO-35) and approx. ±5% (BZX79-C) tolerance range. The series symbol. consists of 37 types with nominal working voltages from 2.4 to 75 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables 1 and 2 A Tj = 25 °C prior to surge Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.3 Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VF forward voltage IF = 10 mA; see Fig.4 0.9 V 2002 Feb 27 2 Document Outline FEATURES APPLICATIONS DESCRIPTION LIMITING VALUES ELECTRICAL CHARACTERISTICS THERMAL CHARACTERISTICS GRAPHICAL DATA PACKAGE OUTLINE SOD27 DATA SHEET STATUS DEFINITIONS DISCLAIMERS
• Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage
k a APPLICATIONS
MAM239 • Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed The diodes are type branded. leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and Fig.1 Simplified outline (SOD27; DO-35) and approx. ±5% (BZX79-C) tolerance range. The series symbol. consists of 37 types with nominal working voltages from 2.4 to 75 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables 1 and 2 A Tj = 25 °C prior to surge Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.3 Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VF forward voltage IF = 10 mA; see Fig.4 0.9 V 2002 Feb 27 2 Document Outline FEATURES APPLICATIONS DESCRIPTION LIMITING VALUES ELECTRICAL CHARACTERISTICS THERMAL CHARACTERISTICS GRAPHICAL DATA PACKAGE OUTLINE SOD27 DATA SHEET STATUS DEFINITIONS DISCLAIMERS
