Datasheet IGB03N120H2 (Infineon) - 3
| Manufacturer | Infineon |
| Description | HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package |
| Pages / Page | 12 / 3 — Switching Characteristic, Inductive Load,. Value. Parameter Symbol. … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
Switching Characteristic, Inductive Load,. Value. Parameter Symbol. Conditions. Unit. min. typ. max. IGBT Characteristic
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IGB03N120H2
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=25°C, - 9.2 - ns Rise time tr VCC=800V,IC=3A, - 5.2 - Turn-off delay time t V d ( o f f ) G E =1 5V/ 0 V, - 281 - Fall time t R f G =8 2 Ω , - 29 - L 2)=180nH, Turn-on energy E σ o n 2 ) - 0.14 - mJ Cσ =40pF Turn-off energy Eoff - 0.15 - Energy losses include Total switching energy Ets “tail” and diode 4) - 0.29 - reverse recovery.
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=150°C - 9.4 - ns Rise time tr VCC=800V, - 6.7 - Turn-off delay time t I d ( o f f ) C =3A , - 340 - Fall time t VGE=15V/0V, f - 63 - Turn-on energy E RG=82Ω, o n - 0.22 - mJ L 2)=180nH, Turn-off energy E σ o f f 2 ) - 0.26 - Cσ =40pF Total switching energy Ets Energy losses include - 0.48 - “tail” and diode 3) reverse recovery.
Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-off energy Eoff VCC=800V, mJ IC=3A, VGE=15V/0V, RG=82Ω, C 2) r =4nF T - 0.05 - j =2 5 ° C T - 0.09 - j = 150 ° C 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 4) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.4 Oct. 07
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=25°C, - 9.2 - ns Rise time tr VCC=800V,IC=3A, - 5.2 - Turn-off delay time t V d ( o f f ) G E =1 5V/ 0 V, - 281 - Fall time t R f G =8 2 Ω , - 29 - L 2)=180nH, Turn-on energy E σ o n 2 ) - 0.14 - mJ Cσ =40pF Turn-off energy Eoff - 0.15 - Energy losses include Total switching energy Ets “tail” and diode 4) - 0.29 - reverse recovery.
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=150°C - 9.4 - ns Rise time tr VCC=800V, - 6.7 - Turn-off delay time t I d ( o f f ) C =3A , - 340 - Fall time t VGE=15V/0V, f - 63 - Turn-on energy E RG=82Ω, o n - 0.22 - mJ L 2)=180nH, Turn-off energy E σ o f f 2 ) - 0.26 - Cσ =40pF Total switching energy Ets Energy losses include - 0.48 - “tail” and diode 3) reverse recovery.
Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-off energy Eoff VCC=800V, mJ IC=3A, VGE=15V/0V, RG=82Ω, C 2) r =4nF T - 0.05 - j =2 5 ° C T - 0.09 - j = 150 ° C 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 4) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.4 Oct. 07