Datasheet MMBTA42 (Nexperia) - 3
| Manufacturer | Nexperia |
| Description | NPN high-voltage transistor |
| Pages / Page | 7 / 3 — Nexperia. MMBTA42. NPN high-voltage transistor. 10. Characteristics Table … |
| Revision | 12202310 |
| File Format / Size | PDF / 205 Kb |
| Document Language | English |
Nexperia. MMBTA42. NPN high-voltage transistor. 10. Characteristics Table 7. Characteristics. Symbol. Parameter. Conditions. Min. Typ
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Nexperia MMBTA42 NPN high-voltage transistor 10. Characteristics Table 7. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 200 V; IE = 0 A; Tamb = 25 °C - - 100 nA current IEBO emitter-base cut-off VEB = 6 V; IC = 0 A; Tamb = 25 °C - - 100 nA current hFE DC current gain VCE = 10 V; IC = 1 mA; Tamb = 25 °C 25 - - VCE = 10 V; IC = 10 mA; Tamb = 25 °C 40 - - VCE = 10 V; IC = 30 mA; Tamb = 25 °C 40 - - VCEsat collector-emitter IC = 20 mA; IB = 2 mA; Tamb = 25 °C - - 500 mV saturation voltage VBEsat base-emitter saturation - - 900 mV voltage Cre feedback capacitance VCB = 20 V; IC = 0 A; ic = 0 A; f = 1 MHz; - - 3 F Tamb = 25 °C fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz; 50 - - MHz Tamb = 25 °C
11. Package outline
3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 1.9 0.38 0.09 Dimensions in mm 18-03-12
Fig. 1. Package outline SOT23
MMBTA42 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2023. All rights reserved
Product data sheet 12 October 2023 3 / 7
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 200 V; IE = 0 A; Tamb = 25 °C - - 100 nA current IEBO emitter-base cut-off VEB = 6 V; IC = 0 A; Tamb = 25 °C - - 100 nA current hFE DC current gain VCE = 10 V; IC = 1 mA; Tamb = 25 °C 25 - - VCE = 10 V; IC = 10 mA; Tamb = 25 °C 40 - - VCE = 10 V; IC = 30 mA; Tamb = 25 °C 40 - - VCEsat collector-emitter IC = 20 mA; IB = 2 mA; Tamb = 25 °C - - 500 mV saturation voltage VBEsat base-emitter saturation - - 900 mV voltage Cre feedback capacitance VCB = 20 V; IC = 0 A; ic = 0 A; f = 1 MHz; - - 3 F Tamb = 25 °C fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz; 50 - - MHz Tamb = 25 °C
11. Package outline
3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 1.9 0.38 0.09 Dimensions in mm 18-03-12
Fig. 1. Package outline SOT23
MMBTA42 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2023. All rights reserved
Product data sheet 12 October 2023 3 / 7
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents