Datasheet MMBFJ201 (Fairchild)
| Manufacturer | Fairchild |
| Description | N-Channel General Purpose Amplifier in SOT-23 Package |
| Pages / Page | 13 / 1 — J201 / J202 / MMBFJ201 / MMBFJ202. J201. MMBFJ201. J202. MMBFJ202. TO-92. … |
| File Format / Size | PDF / 640 Kb |
| Document Language | English |
J201 / J202 / MMBFJ201 / MMBFJ202. J201. MMBFJ201. J202. MMBFJ202. TO-92. SOT-23. NOTE: Source & Drain. Mark: 62P / 62Q
Model Line for this Datasheet
Text Version of Document
J201 / J202 / MMBFJ201 / MMBFJ202 J201 MMBFJ201 J202 MMBFJ202 G S G TO-92 S SOT-23 D D NOTE: Source & Drain Mark: 62P / 62Q are interchangeable N-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units J202-203 *MMBFJ202-203
PD Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units J202-203 *MMBFJ202-203
PD Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation