Datasheet FGD3050G2V (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | Ignition IGBT, 500V, 27A, 1.3V, 300mJ, DPAK EcoSPARK II, N-Channel Ignition |
| Pages / Page | 9 / 2 — FGD3050G2V. THERMAL RESISTANCE RATINGS. Parameter. Symbol. Max. Units. … |
| File Format / Size | PDF / 602 Kb |
| Document Language | English |
FGD3050G2V. THERMAL RESISTANCE RATINGS. Parameter. Symbol. Max. Units. ELECTRICAL CHARACTERISTICS. Test Conditions. Min. Typ. Max
Model Line for this Datasheet
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FGD3050G2V THERMAL RESISTANCE RATINGS Parameter Symbol Max Units
Junction−to−Case – Steady State (Drain) RJC 0.9 C/W
ELECTRICAL CHARACTERISTICS
(TJ = 25C unless otherwise specified)
Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS
BVCER Collector to Emitter Breakdown ICE = 2 mA, VGE = 0 V, 470 − 530 V Voltage RGE = 1 k, TJ = −40 to 150C BVCES Collector to Emitter Breakdown ICE = 10 mA, VGE = 0 V, 495 − 555 V Voltage RGE = 0, TJ = −40 to 150C BVECS Emitter to Collector Breakdown ICE = −75 mA, VGE = 0 V, 20 − − V Voltage TJ = 25C BVGES Gate to Emitter Breakdown Voltage IGES = 5 mA 12 14 − V ICER Collector to Emitter Leakage Current VCE = 250 V TJ = 25C − − 25 A RGE = 1 k TJ = 150C − − 1 mA IECS Emitter to Collector Leakage Current VEC = 15 V TJ = 25C − − 1 mA TJ = 150C − − 40 R1 Series Gate Resistance − 111 − R2 Gate to Emitter Resistance 10K − 30K
ON CHARACTERISTICS
(Note 5) VCE(SAT) Collector to Emitter Saturation ICE = 6 A, VGE = 4 V, TJ = 25C − 1.1 1.2 V Voltage VCE(SAT) Collector to Emitter Saturation ICE = 10 A, VGE = 4.5 V, TJ = 150C − 1.3 1.45 V Voltage VCE(SAT) Collector to Emitter Saturation ICE = 15 A, VGE = 4.5 V, TJ = 150C − 1.6 1.75 V Voltage
DYNAMIC CHARACTERISTICS
QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V − 22 − nC VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA TJ = 25C 1.3 1.6 2.2 V VCE = VGE TJ = 150C 0.75 1.1 1.8 VGEP Gate to Emitter Plateau Voltage VCE = 12 V, ICE = 10 A − 2.7 − V
SWITCHING CHARACTERISTICS
td(ON)R Current Turn−On Delay VCE = 14 V, RL = 1 , − 0.9 4 s Time−Resistive VGE = 5 V, RG = 1 K, trR Current Rise Time−Resistive − 1.6 7 td(OFF)L Current Turn−Off Delay VCE = 300 V, L = 2 mH, − 5.4 15 Time−Inductive VGE = 5 V, RG = 1 K, tfL Current Fall Time−Inductive − 1.4 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Diameter Tape Width Qty
† FGD3050G2 FGD3050G2V DPAK (Pb−Free) 330 mm 16 mm 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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Junction−to−Case – Steady State (Drain) RJC 0.9 C/W
ELECTRICAL CHARACTERISTICS
(TJ = 25C unless otherwise specified)
Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS
BVCER Collector to Emitter Breakdown ICE = 2 mA, VGE = 0 V, 470 − 530 V Voltage RGE = 1 k, TJ = −40 to 150C BVCES Collector to Emitter Breakdown ICE = 10 mA, VGE = 0 V, 495 − 555 V Voltage RGE = 0, TJ = −40 to 150C BVECS Emitter to Collector Breakdown ICE = −75 mA, VGE = 0 V, 20 − − V Voltage TJ = 25C BVGES Gate to Emitter Breakdown Voltage IGES = 5 mA 12 14 − V ICER Collector to Emitter Leakage Current VCE = 250 V TJ = 25C − − 25 A RGE = 1 k TJ = 150C − − 1 mA IECS Emitter to Collector Leakage Current VEC = 15 V TJ = 25C − − 1 mA TJ = 150C − − 40 R1 Series Gate Resistance − 111 − R2 Gate to Emitter Resistance 10K − 30K
ON CHARACTERISTICS
(Note 5) VCE(SAT) Collector to Emitter Saturation ICE = 6 A, VGE = 4 V, TJ = 25C − 1.1 1.2 V Voltage VCE(SAT) Collector to Emitter Saturation ICE = 10 A, VGE = 4.5 V, TJ = 150C − 1.3 1.45 V Voltage VCE(SAT) Collector to Emitter Saturation ICE = 15 A, VGE = 4.5 V, TJ = 150C − 1.6 1.75 V Voltage
DYNAMIC CHARACTERISTICS
QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V − 22 − nC VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA TJ = 25C 1.3 1.6 2.2 V VCE = VGE TJ = 150C 0.75 1.1 1.8 VGEP Gate to Emitter Plateau Voltage VCE = 12 V, ICE = 10 A − 2.7 − V
SWITCHING CHARACTERISTICS
td(ON)R Current Turn−On Delay VCE = 14 V, RL = 1 , − 0.9 4 s Time−Resistive VGE = 5 V, RG = 1 K, trR Current Rise Time−Resistive − 1.6 7 td(OFF)L Current Turn−Off Delay VCE = 300 V, L = 2 mH, − 5.4 15 Time−Inductive VGE = 5 V, RG = 1 K, tfL Current Fall Time−Inductive − 1.4 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Diameter Tape Width Qty
† FGD3050G2 FGD3050G2V DPAK (Pb−Free) 330 mm 16 mm 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
www.onsemi.com 2