Datasheet PMV65XPE (Nexperia) - 3
| Manufacturer | Nexperia |
| Description | 20 V, P-channel Trench MOSFET |
| Pages / Page | 15 / 3 — Nexperia. PMV65XPE. 20 V, P-channel Trench MOSFET. 8. Limiting values. … |
| Revision | 04201705 |
| File Format / Size | PDF / 719 Kb |
| Document Language | English |
Nexperia. PMV65XPE. 20 V, P-channel Trench MOSFET. 8. Limiting values. Table 5. Limiting values. Symbol. Parameter. Conditions. Min. Max
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Nexperia PMV65XPE 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -12 A Ptot total power dissipation Tamb = 25 °C [2] - 480 mW [1] - 890 mW Tsp = 25 °C - 6250 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - -0.9 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
PMV65XPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 25 April 2014 3 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
Nexperia PMV65XPE 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -12 A Ptot total power dissipation Tamb = 25 °C [2] - 480 mW [1] - 890 mW Tsp = 25 °C - 6250 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - -0.9 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
PMV65XPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 25 April 2014 3 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information