Datasheet PMV65UNEA (Nexperia)
| Manufacturer | Nexperia |
| Description | 20 V, N-channel Trench MOSFET |
| Pages / Page | 15 / 1 — PMV65UNEA. 20 V, N-channel Trench MOSFET. 17 March 2017. Product data … |
| Revision | 23202103 |
| File Format / Size | PDF / 258 Kb |
| Document Language | English |
PMV65UNEA. 20 V, N-channel Trench MOSFET. 17 March 2017. Product data sheet. 1. General description. 2. Features and benefits
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PMV65UNEA 20 V, N-channel Trench MOSFET 17 March 2017 Product data sheet 1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Enhanced power dissipation capability of 940 mW • ElectroStatic Discharge (ESD) protection > 2KV HBM • AEC-Q101 qualified
3. Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage Tj = 25 °C; Tamb = 25 °C -8 - 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 2.8 A
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C - 63 73 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents
PMV65UNEA 20 V, N-channel Trench MOSFET 17 March 2017 Product data sheet 1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Enhanced power dissipation capability of 940 mW • ElectroStatic Discharge (ESD) protection > 2KV HBM • AEC-Q101 qualified
3. Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage Tj = 25 °C; Tamb = 25 °C -8 - 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 2.8 A
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C - 63 73 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents