Datasheet PMV65XP (Nexperia) - 5
| Manufacturer | Nexperia |
| Description | 20 V, single P-channel Trench MOSFET |
| Pages / Page | 14 / 5 — Nexperia. PMV65XP. 20 V, single P-channel Trench MOSFET |
| Revision | 04201705 |
| File Format / Size | PDF / 742 Kb |
| Document Language | English |
Nexperia. PMV65XP. 20 V, single P-channel Trench MOSFET
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Nexperia PMV65XP 20 V, single P-channel Trench MOSFET
017aaa839 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0 0.01 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa840 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 10 0 0.02 0.01 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V breakdown voltage VGSth gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V voltage IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 5 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
017aaa839 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0 0.01 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa840 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 10 0 0.02 0.01 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V breakdown voltage VGSth gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V voltage IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 5 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information