Datasheet PMV65XP (Nexperia) - 7
| Manufacturer | Nexperia |
| Description | 20 V, single P-channel Trench MOSFET |
| Pages / Page | 14 / 7 — Nexperia. PMV65XP. 20 V, single P-channel Trench MOSFET. Fig. 8. … |
| Revision | 04201705 |
| File Format / Size | PDF / 742 Kb |
| Document Language | English |
Nexperia. PMV65XP. 20 V, single P-channel Trench MOSFET. Fig. 8. Drain-source on-state resistance as a function
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Text Version of Document
Nexperia PMV65XP 20 V, single P-channel Trench MOSFET
017aaa842 300 017aaa843 300 R -1.4 V -1.5 V -1.6 V -1.7 V -1.8 V DSon RDSon (mΩ) (mΩ) 200 200 -2 V 100 100 Tj = 150 °C -2.5 V VGS = -4.5 V Tj = 25 °C 0 0 0 -5 -10 -15 0 -2 -4 -6 -8 ID (A) VGS (V) Tj = 25 °C ID = -2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
017aaa844 -12 017aaa845 2.0 ID a (A) -9 1.5 -6 1.0 -3 0.5 Tj = 150 °C Tj = 25 °C 0 0 0 -0.5 -1.0 -1.5 -2.0 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical function of gate-source voltage; typical values values
PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 7 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
017aaa842 300 017aaa843 300 R -1.4 V -1.5 V -1.6 V -1.7 V -1.8 V DSon RDSon (mΩ) (mΩ) 200 200 -2 V 100 100 Tj = 150 °C -2.5 V VGS = -4.5 V Tj = 25 °C 0 0 0 -5 -10 -15 0 -2 -4 -6 -8 ID (A) VGS (V) Tj = 25 °C ID = -2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
017aaa844 -12 017aaa845 2.0 ID a (A) -9 1.5 -6 1.0 -3 0.5 Tj = 150 °C Tj = 25 °C 0 0 0 -0.5 -1.0 -1.5 -2.0 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical function of gate-source voltage; typical values values
PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 7 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information