Datasheet ZLLS350 (Diodes) - 2

A Product Line of Diodes Incorporated ZLLS350 Maximum Ratings
@TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
DC Blocking Voltage VRM 40 V Continuous Forward current IF 380 mA Average Peak Forward Current; duty cycle = 50% IFAV 650 mA Non-Repetitive Forward Current @ t < 100µs 6.0 A @ t < 10ms IFSM 1.3 Power Dissipation at TA = +25°C (Note 5) PD 357 mW Power Dissipation at TA = +25°C (Note 6) PD 413 mW Operating and storage temperature range TSTG -55 to +150 °C Junction Temperature TJ +150 °C
Thermal Characteristics Characteristic Symbol Value Unit
Thermal Resistance Junction to Ambient (Note 5) RθJA 350 °C/W Thermal Resistance Junction to Ambient (Note 6) RθJA 303
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 40 53 — V IR = 100 µA — 395 450 IF = 30mA — 430 520 I Forward Voltage Drop (Note 7) V F = 50mA F mV — 490 635 IF = 100mA — 650 1000 IF = 275mA Leakage Current IR — 0.15 4 µA VR = 30V Total Capacitance CT — 2.5 6 — f = 1MHz; VR = 30V Switch from IF = 100mA to Reverse Recovery Time trr — 1 — nS IR = 100mA. Measured at IR = 10mA Notes: 5. For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions 6. As above measured @ t < 5 seconds 7. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% ZLLS350 2 of 4 December 2013 Document Number: DS33225 Rev. 6 - 2
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