Datasheet SI7489DP (Vishay) - 3
| Manufacturer | Vishay |
| Description | P-Channel 100-V (D-S) MOSFET |
| Pages / Page | 13 / 3 — Si7489DP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| File Format / Size | PDF / 309 Kb |
| Document Language | English |
Si7489DP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
Model Line for this Datasheet
Text Version of Document
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 20 35 V 16 GS = 10 thru 4 V 30 25 12 20 ain Current (A) - Drain Current (A) - Dr 8 15 D D I I TA = 125 °C 10 3 V 4 25 °C 5 2 V - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.042 7000 6000 ) 0.040 C Ω iss 5000 VGS = 4.5 V 0.038 4000 3000 - On-Resistance ( 0.036 VGS = 10 V C - Capacitance (pF) DS(on) 2000 R 0.034 Coss C 1000 rss 0.032 0 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 2.3 ID = 7.8 A ID = 7.8 A 2.0 8 VDS = 50 V 1.7 VGS = 10 V, 4.5 V 6 ed) V 1.4 DS = 80 V maliz 4 - On-Resistance (Nor 1.1 - Gate-to-Source Voltage (V) DS(on)R GS 2 V 0.8 0 0.5 0 20 40 60 80 100 120 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 20 35 V 16 GS = 10 thru 4 V 30 25 12 20 ain Current (A) - Drain Current (A) - Dr 8 15 D D I I TA = 125 °C 10 3 V 4 25 °C 5 2 V - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.042 7000 6000 ) 0.040 C Ω iss 5000 VGS = 4.5 V 0.038 4000 3000 - On-Resistance ( 0.036 VGS = 10 V C - Capacitance (pF) DS(on) 2000 R 0.034 Coss C 1000 rss 0.032 0 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 2.3 ID = 7.8 A ID = 7.8 A 2.0 8 VDS = 50 V 1.7 VGS = 10 V, 4.5 V 6 ed) V 1.4 DS = 80 V maliz 4 - On-Resistance (Nor 1.1 - Gate-to-Source Voltage (V) DS(on)R GS 2 V 0.8 0 0.5 0 20 40 60 80 100 120 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 3