Datasheet THAT 380G (THAT Corporation) - 2
| Manufacturer | THAT Corporation |
| Description | Low-Noise Matched Transistor Array Die |
| Pages / Page | 4 / 2 — SPECIFICATIONS1. Absolute Maximum Ratings2,3. NPN Electrical … |
| File Format / Size | PDF / 106 Kb |
| Document Language | English |
SPECIFICATIONS1. Absolute Maximum Ratings2,3. NPN Electrical Characteristics2. PNP Electrical Characteristics2
Model Line for this Datasheet
Text Version of Document
Document 600042 Rev 03 Page 2 of 4 THAT380G Matched Transistor Array Die
SPECIFICATIONS1 Absolute Maximum Ratings2,3
NPN Collector-Emitter Voltage (BVCEO) 36 V Collector Current 30 mA NPN Collector-Base Voltage (BVCBO) 36V Emitter Current 30 mA PNP Collector-Emitter Voltage (BVCEO) –36 V Operating Temperature Range (TOP) -40 to +85 °C PNP Collector-Base Voltage (BVCBO) –36 V Maximum Junction Temperature (TJMAX) +125 °C Collector-Substrate Voltage (BVCS) ± 100 V Storage Temperature (TST) -45 to +125 °C
NPN Electrical Characteristics2
Parameter Symbol Conditions Min Typ Max Units NPN Current Gain hfe VCB = 10 V IC = 1 mA 60 100 — IC = 10 µA 100 — NPN Current Gain Matching Δhfe VCB = 10 V, IC = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.8 — nV√Hz NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz NPN ΔVBE (VBE3-VBE4 ;VBE5-VBE6) VOS IC = 1 mA — ±0.5 ±3 mV IC = 10 mA — ±0.5 mV NPN ΔIB (IB3-IB4, IB5-IB6) IOS IC = 1 mA — ±500 ±1500 nA IC = 10 μA — ±5 nA NPN Collector-Base Leakage Current ICBO VCB = 25 V — 25 — pA NPN Bulk Resistance rBE VCB = 0 V, 10 μA < IC < 10 mA — 2 — Ω NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 30 — Ω NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100μA — 0.05 V NPN Output Capacitance COB VCB = 10 V, IE = 0 mA, 100 kHz 3 pF NPN Breakdown Voltage BVCEO IC = 10 µAdc, IB = 0 36 40 — V Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 5 — pF
PNP Electrical Characteristics2
Parameter Symbol Conditions Min Typ Max Units PNP Current Gain hfe VCB = 10 V IC = 1 mA 50 75 — IC = 10 μA 75 — PNP Current Gain Matching Δhfe VCB = 10 V, IC = 1 mA — 5 — % PNP Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.75 — nV√Hz THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2014, THAT Corporation. All rights reserved. Document Outline Home Features & Applications Description Ordering Information Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Revision History
SPECIFICATIONS1 Absolute Maximum Ratings2,3
NPN Collector-Emitter Voltage (BVCEO) 36 V Collector Current 30 mA NPN Collector-Base Voltage (BVCBO) 36V Emitter Current 30 mA PNP Collector-Emitter Voltage (BVCEO) –36 V Operating Temperature Range (TOP) -40 to +85 °C PNP Collector-Base Voltage (BVCBO) –36 V Maximum Junction Temperature (TJMAX) +125 °C Collector-Substrate Voltage (BVCS) ± 100 V Storage Temperature (TST) -45 to +125 °C
NPN Electrical Characteristics2
Parameter Symbol Conditions Min Typ Max Units NPN Current Gain hfe VCB = 10 V IC = 1 mA 60 100 — IC = 10 µA 100 — NPN Current Gain Matching Δhfe VCB = 10 V, IC = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.8 — nV√Hz NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz NPN ΔVBE (VBE3-VBE4 ;VBE5-VBE6) VOS IC = 1 mA — ±0.5 ±3 mV IC = 10 mA — ±0.5 mV NPN ΔIB (IB3-IB4, IB5-IB6) IOS IC = 1 mA — ±500 ±1500 nA IC = 10 μA — ±5 nA NPN Collector-Base Leakage Current ICBO VCB = 25 V — 25 — pA NPN Bulk Resistance rBE VCB = 0 V, 10 μA < IC < 10 mA — 2 — Ω NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 30 — Ω NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100μA — 0.05 V NPN Output Capacitance COB VCB = 10 V, IE = 0 mA, 100 kHz 3 pF NPN Breakdown Voltage BVCEO IC = 10 µAdc, IB = 0 36 40 — V Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 5 — pF
PNP Electrical Characteristics2
Parameter Symbol Conditions Min Typ Max Units PNP Current Gain hfe VCB = 10 V IC = 1 mA 50 75 — IC = 10 μA 75 — PNP Current Gain Matching Δhfe VCB = 10 V, IC = 1 mA — 5 — % PNP Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.75 — nV√Hz THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2014, THAT Corporation. All rights reserved. Document Outline Home Features & Applications Description Ordering Information Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Revision History