Datasheet DXTN80060DFG (Diodes) - 5
| Manufacturer | Diodes |
| Description | NPN, 60V, 6.5A, PowerDI3333-8 |
| Pages / Page | 8 / 5 — DXTN80060DFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. … |
| File Format / Size | PDF / 538 Kb |
| Document Language | English |
DXTN80060DFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTN80060DFG Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =20 V =2V C B CE 600 150°C 500 85°C ) ni 400 25°C V a ( G )t 0.1 85°C sa(
FE
300 h -55°C CE 150°C V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 25°C 0.1 ) I /I =50 C B V ) 0.6 ( ) V t ( sa ) ( n o( 85°C CE E 0.4 V I /I =10 B 0.01 C B V 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V( 25°C )t an 0.6 100 t sa( E B aci V 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80060DFG 5 of 8 August 2025 Document number: DS46854 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =20 V =2V C B CE 600 150°C 500 85°C ) ni 400 25°C V a ( G )t 0.1 85°C sa(
FE
300 h -55°C CE 150°C V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 25°C 0.1 ) I /I =50 C B V ) 0.6 ( ) V t ( sa ) ( n o( 85°C CE E 0.4 V I /I =10 B 0.01 C B V 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V( 25°C )t an 0.6 100 t sa( E B aci V 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80060DFG 5 of 8 August 2025 Document number: DS46854 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.