Datasheet DXTP80100CFG (Diodes) - 5
| Manufacturer | Diodes |
| Description | PNP, 100V, 4A in PowerDI3333-8/SWP package |
| Pages / Page | 8 / 5 — DXTP80100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. … |
| File Format / Size | PDF / 528 Kb |
| Document Language | English |
DXTP80100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTP80100CFG Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =10 V =-2V C B CE 150°C 600 500 85°C ) 150°C ni 400 V a ( ) G 25°C t 0.1 85°C sa(
FE
300 h CE -55°C -V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =-2V CE -55°C 0.8 ) 25°C V ) 0.6 ( ) V t I /I =50 ( sa ) ( 0.1 C B n o 85°C ( CE E B 0.4 -V -V 150°C I /I =10 C B 0.2 I /I =20 C B 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C pF( Cibo ) 0.8 V ce ( 25°C )t an sa 0.6 100 t ( E B aci -V 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 20 40 60 80 100 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP80100CFG 5 of 8 August 2025 Document number: DS46852 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =10 V =-2V C B CE 150°C 600 500 85°C ) 150°C ni 400 V a ( ) G 25°C t 0.1 85°C sa(
FE
300 h CE -55°C -V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =-2V CE -55°C 0.8 ) 25°C V ) 0.6 ( ) V t I /I =50 ( sa ) ( 0.1 C B n o 85°C ( CE E B 0.4 -V -V 150°C I /I =10 C B 0.2 I /I =20 C B 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C pF( Cibo ) 0.8 V ce ( 25°C )t an sa 0.6 100 t ( E B aci -V 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 20 40 60 80 100 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP80100CFG 5 of 8 August 2025 Document number: DS46852 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.