Datasheet 4N25, 4N26, 4N27, 4N28 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Optocoupler, Phototransistor Output, with Base Connection in 6-DIP package |
| Pages / Page | 7 / 2 — 4N25, 4N26, 4N27, 4N28. ABSOLUTE MAXIMUM RATINGS (1). PARAMETER. TEST … |
| File Format / Size | PDF / 131 Kb |
| Document Language | English |
4N25, 4N26, 4N27, 4N28. ABSOLUTE MAXIMUM RATINGS (1). PARAMETER. TEST CONDITION. SYMBOL. VALUE. UNIT. COUPLER. Notes
Model Line for this Datasheet
Text Version of Document
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER
Isolation test voltage VISO 5000 VRMS Creepage distance ≥ 7 mm Clearance distance ≥ 7 mm Isolation thickness between emitter and ≥ 0.4 mm detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO 1012 Ω Isolation resistance VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 125 °C max.10 s dip soldering: Soldering temperature (2) distance to seating plane Tsld 260 °C ≥ 1.5 mm
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage (2) IF = 50 mA VF 1.3 1.5 V Reverse current (2) VR = 3 V IR 0.1 100 μA Capacitance VR = 0 V CO 25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 μA BVCBO 70 V Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V Emitter collector breakdown voltage (2) IE = 100 μA BVECO 7 V 4N25 5 50 nA 4N26 5 50 nA ICEO(dark) (2) VCE = 10 V, (base open) 4N27 5 50 nA 4N28 10 100 nA ICBO(dark) (2) VCB = 10 V, 2 20 nA (emitter open) Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5000 V Saturation voltage, collector emitter ICE = 2 mA, IF = 50 mA VCE(sat) 0.5 V Resistance, input output (2) VIO = 500 V RIO 100 GΩ Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.8, 07-Jan-10 133
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER
Isolation test voltage VISO 5000 VRMS Creepage distance ≥ 7 mm Clearance distance ≥ 7 mm Isolation thickness between emitter and ≥ 0.4 mm detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO 1012 Ω Isolation resistance VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 125 °C max.10 s dip soldering: Soldering temperature (2) distance to seating plane Tsld 260 °C ≥ 1.5 mm
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage (2) IF = 50 mA VF 1.3 1.5 V Reverse current (2) VR = 3 V IR 0.1 100 μA Capacitance VR = 0 V CO 25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 μA BVCBO 70 V Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V Emitter collector breakdown voltage (2) IE = 100 μA BVECO 7 V 4N25 5 50 nA 4N26 5 50 nA ICEO(dark) (2) VCE = 10 V, (base open) 4N27 5 50 nA 4N28 10 100 nA ICBO(dark) (2) VCB = 10 V, 2 20 nA (emitter open) Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5000 V Saturation voltage, collector emitter ICE = 2 mA, IF = 50 mA VCE(sat) 0.5 V Resistance, input output (2) VIO = 500 V RIO 100 GΩ Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.8, 07-Jan-10 133