Datasheet MA2J111 (MA111) (Panasonic)

This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits Unit: mm
1.25±0.1 0.7±0.1
0.35±0.1 M
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d ■ Features • Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
• High breakdown voltage: VR = 80 V 1 VR Maximum peak reverse voltage VRM Forward current IF Peak forward current IFM Non-repetitive peak forward
surge current * IFSM Junction temperature Tj Storage temperature Tstg Note) *: t = 1 s Rating Unit 80 V 80 V 100 mA 225 mA 500 mA 150 °C −55 to +150 °C 2.5±0.2 1.7±0.1
0.4±0.1
(0.15) Reverse voltage 0.16+0.1
–0.06 5˚ 0 to 0.1 Symbol 5˚ di
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0.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C
Parameter 0 to 0.1 1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package Marking Symbol: 1B ce
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tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Forward voltage VF VR Reverse current en Terminal capacitance an Reverse voltage Ma int Reverse recovery time * IR Ct
trr Conditions Min IF = 100 mA
IR = 100 µA Typ Max Unit 0.95 1.20 V 100 nA 1.2 pF 3 ns 80 V VR = 75 V VR = 0 V, f = 1 MHz 0.6 IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU) Input Pulse
tp tr
10% A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: March 2004 Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05 Output Pulse
t
IF trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω Note) The part number in the parenthesis shows conventional part number.
SKF00011BED 1