Datasheet BD6xxx (STMicroelectronics)
| Manufacturer | STMicroelectronics |
| Description | Complementary power Darlington transistors |
| Pages / Page | 12 / 1 — BD6xxx. Features. Applications. SOT-32. Description. Figure 1. Internal … |
| File Format / Size | PDF / 386 Kb |
| Document Language | English |
BD6xxx. Features. Applications. SOT-32. Description. Figure 1. Internal schematic diagram. Table 1. Device summary. Order codes. Marking
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BD6xxx
Complementary power Darlington transistors
Features
. ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
Applications
1 2 3 ■ Linear and switching industrial equipment
SOT-32 Description
The devices are manufactured in planar base
Figure 1. Internal schematic diagram
island technology with monolithic Darlington configuration. R1 typ.= 15 KΩ R2 typ.= 100 Ω
Table 1. Device summary Order codes Marking Package Packaging
BD677 BD677 BD677A BD677A BD678 BD678 BD678A BD678A BD679 BD679 SOT-32 Tube BD679A BD679A BD680 BD680 BD680A BD680A BD681 BD681 BD682 BD682 January 2008 Rev 5 1/12 www.st.com 12 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Absolute maximum ratings Table 2. Absolute maximum ratings 2 Electrical characteristics Table 3. Electrical characteristics 2.1 Typical characteristic (curves) Figure 2. DC current gain (NPN) Figure 3. DC current gain (PNP) Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Figure 8. Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter voltage (NPN) Figure 11. Base-emitter voltage (PNP) Figure 12. Resistive load switching time (NPN, on) Figure 13. Resistive load switching time (PNP, on) Figure 14. Resistive load switching time (NPN, off) Figure 15. Resistive load switching time (PNP, off) 2.2 Test circuit Figure 16. Resistive load switching test circuit 3 Package mechanical data 4 Revision history Table 4. Document revision history
Complementary power Darlington transistors
Features
. ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
Applications
1 2 3 ■ Linear and switching industrial equipment
SOT-32 Description
The devices are manufactured in planar base
Figure 1. Internal schematic diagram
island technology with monolithic Darlington configuration. R1 typ.= 15 KΩ R2 typ.= 100 Ω
Table 1. Device summary Order codes Marking Package Packaging
BD677 BD677 BD677A BD677A BD678 BD678 BD678A BD678A BD679 BD679 SOT-32 Tube BD679A BD679A BD680 BD680 BD680A BD680A BD681 BD681 BD682 BD682 January 2008 Rev 5 1/12 www.st.com 12 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Absolute maximum ratings Table 2. Absolute maximum ratings 2 Electrical characteristics Table 3. Electrical characteristics 2.1 Typical characteristic (curves) Figure 2. DC current gain (NPN) Figure 3. DC current gain (PNP) Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Figure 8. Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter voltage (NPN) Figure 11. Base-emitter voltage (PNP) Figure 12. Resistive load switching time (NPN, on) Figure 13. Resistive load switching time (PNP, on) Figure 14. Resistive load switching time (NPN, off) Figure 15. Resistive load switching time (PNP, off) 2.2 Test circuit Figure 16. Resistive load switching test circuit 3 Package mechanical data 4 Revision history Table 4. Document revision history