Datasheet BSS316N (Infineon) - 4
| Manufacturer | Infineon |
| Description | N-Channel Small Signal MOSFET 30 V in SOT-23 package |
| Pages / Page | 9 / 4 — BSS316N. 1 Power dissipation. 2 Drain current. 1.6. 0.5. 1.2. 0.375. [W]. … |
| File Format / Size | PDF / 237 Kb |
| Document Language | English |
BSS316N. 1 Power dissipation. 2 Drain current. 1.6. 0.5. 1.2. 0.375. [W]. [A] 0.8. tot 0.25. 0.4. 0.125. 120. 100. 140. 160. A [°C]. [°C]
Model Line for this Datasheet
Text Version of Document
BSS316N 1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); V GS≥10 V
1.6 0.5 1.2 0.375 [W] [A] 0.8 tot 0.25 I D P 0.4 0.125 0 0 0 40 80 120 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T
101 103
1 µs 10 µs 100 µs 1 ms
100
10 ms 0.5
102
0.2
[A] 10-1 [K/W] A
0.1
I D thJZ
0.05
101
DC 0.02
10-2
0.01 single pulse
10-3 100 102 101 100 10-1 102 101 100 10-1 10-2 10-3 10-4 10-5 V DS [V] t p [s]
Rev 2.3 page 4 2011-07-06
P tot=f(T A) I D=f(T A); V GS≥10 V
1.6 0.5 1.2 0.375 [W] [A] 0.8 tot 0.25 I D P 0.4 0.125 0 0 0 40 80 120 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T
101 103
1 µs 10 µs 100 µs 1 ms
100
10 ms 0.5
102
0.2
[A] 10-1 [K/W] A
0.1
I D thJZ
0.05
101
DC 0.02
10-2
0.01 single pulse
10-3 100 102 101 100 10-1 102 101 100 10-1 10-2 10-3 10-4 10-5 V DS [V] t p [s]
Rev 2.3 page 4 2011-07-06