Datasheet PMV30UN (Nexperia) - 3
| Manufacturer | Nexperia |
| Description | N-channel TrenchMOS ultra low level FET in SOT23 package |
| Pages / Page | 12 / 3 — Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 1. … |
| File Format / Size | PDF / 244 Kb |
| Document Language | English |
Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 1. Normalized total power dissipation as a. Fig 2
Model Line for this Datasheet
Text Version of Document
Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET
03aa25 03aa17 120 120 P I der der (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 T T sp (°C) sp (°C) P I tot D P = ------------ × 100% I = ---------- × 100% der P der I tot 25° ( C ) D 25° ( C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of solder point temperature. function of solder point temperature.
03am33 102 ID Limit R (A) DSon = VDS/ID 10 tp = 10 µs 100 µ s 1 ms 1 10 ms DC 100 ms 10-1 10-2 10-1 1 10 102 VDS (V) Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 3 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks
µ
TrenchMOS™ ultra low level FET
03aa25 03aa17 120 120 P I der der (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 T T sp (°C) sp (°C) P I tot D P = ------------ × 100% I = ---------- × 100% der P der I tot 25° ( C ) D 25° ( C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of solder point temperature. function of solder point temperature.
03am33 102 ID Limit R (A) DSon = VDS/ID 10 tp = 10 µs 100 µ s 1 ms 1 10 ms DC 100 ms 10-1 10-2 10-1 1 10 102 VDS (V) Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 3 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks