Datasheet PMV30UN (Nexperia) - 6
| Manufacturer | Nexperia |
| Description | N-channel TrenchMOS ultra low level FET in SOT23 package |
| Pages / Page | 12 / 6 — Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 5. … |
| File Format / Size | PDF / 244 Kb |
| Document Language | English |
Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 5. Output characteristics: drain current as a. Fig 6
Model Line for this Datasheet
Text Version of Document
Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET
03am34 03am36 20 20 4.5 V 3 V 2.5 V 2.2 V V I DS > ID x RDSon D ID (A) (A) 2 V 15 15 1.8 V 10 10 1.6 V 5 5 1.4 V Tj = 150 °C 25 °C VGS = 1.2 V 0 0 0 0.2 0.4 0.6 0.8 1 0 1 2 3 V V GS (V) DS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values. function of gate-source voltage; typical values.
03am35 03af18 80 2 R T DSon j = 25 °C VGS = 1.8 V a (mΩ) 2 V 60 1.5 2.2 V 40 2.5 V 1 3 V 4.5 V 20 0.5 0 0 0 5 10 15 20 -60 0 60 120 180 ID (A) Tj (°C) Tj = 25 °C R a DSon = --------------- RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance of drain current; typical values. factor as a function of junction temperature.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 6 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks
µ
TrenchMOS™ ultra low level FET
03am34 03am36 20 20 4.5 V 3 V 2.5 V 2.2 V V I DS > ID x RDSon D ID (A) (A) 2 V 15 15 1.8 V 10 10 1.6 V 5 5 1.4 V Tj = 150 °C 25 °C VGS = 1.2 V 0 0 0 0.2 0.4 0.6 0.8 1 0 1 2 3 V V GS (V) DS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values. function of gate-source voltage; typical values.
03am35 03af18 80 2 R T DSon j = 25 °C VGS = 1.8 V a (mΩ) 2 V 60 1.5 2.2 V 40 2.5 V 1 3 V 4.5 V 20 0.5 0 0 0 5 10 15 20 -60 0 60 120 180 ID (A) Tj (°C) Tj = 25 °C R a DSon = --------------- RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance of drain current; typical values. factor as a function of junction temperature.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 6 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks