Datasheet IRFD024 (Vishay) - 6
| Manufacturer | Vishay |
| Description | N-Channel Power MOSFET |
| Pages / Page | 9 / 6 — IRFD024. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - … |
| File Format / Size | PDF / 425 Kb |
| Document Language | English |
IRFD024. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
Model Line for this Datasheet
Text Version of Document
IRFD024
www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD R D.U.T g + V - DD V I DS AS 10 V t 0.01 p W IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G VGS 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-0885-Rev. D, 30-Aug-2021
6
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD R D.U.T g + V - DD V I DS AS 10 V t 0.01 p W IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G VGS 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-0885-Rev. D, 30-Aug-2021
6
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000