Datasheet KSP94 (Fairchild)
| Manufacturer | Fairchild |
| Description | High Voltage PNP Epitaxial Silicon Transistor in TO-92 package |
| Pages / Page | 5 / 1 — KSP. 9 4. KSP94. High Voltage Transistor. PNP Epitaxial Silicon … |
| File Format / Size | PDF / 83 Kb |
| Document Language | English |
KSP. 9 4. KSP94. High Voltage Transistor. PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings. Symbol. Parameter. Value. Units
Model Line for this Datasheet
Text Version of Document
KSP 9 4 KSP94 High Voltage Transistor
• High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 TO-92 1 1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -6 V IC Collector Current -300 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -400 V BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -400 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -6 V ICBO Collector Cut-off Current VCB= -300V, VE=0 -100 nA ICES Collector Cut-off Current VCE= -400V, VBE=0V -1 µA IEBO Emitter Cut-off Current VBE= -4V, IC=0 -100 nA hFE1 DC Current Gain VCE= -10V, IC= -1mA 40 hFE2 VCE= -10V, IC= -10mA 50 300 hFE3 VCE= -10V, IC= -50mA 45 hFE4 VCE= -10V, IC= -100mA 40 VCE (sat)1 Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -500 mV VCE (sat)2 IC= -50mA, IB= -5mA -750 mV VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -750 mV Cob Output Capacitance VCB= -20V, IE=0, f=1MHz 7 pF ©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002
• High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 TO-92 1 1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -6 V IC Collector Current -300 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -400 V BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -400 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -6 V ICBO Collector Cut-off Current VCB= -300V, VE=0 -100 nA ICES Collector Cut-off Current VCE= -400V, VBE=0V -1 µA IEBO Emitter Cut-off Current VBE= -4V, IC=0 -100 nA hFE1 DC Current Gain VCE= -10V, IC= -1mA 40 hFE2 VCE= -10V, IC= -10mA 50 300 hFE3 VCE= -10V, IC= -50mA 45 hFE4 VCE= -10V, IC= -100mA 40 VCE (sat)1 Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -500 mV VCE (sat)2 IC= -50mA, IB= -5mA -750 mV VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -750 mV Cob Output Capacitance VCB= -20V, IE=0, f=1MHz 7 pF ©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002