HER301G – HER308G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating CurveFig.2 Typical Junction Capacitance 4 1000 ) A( TN 3 ) RE F p( 100 HER301G-HER305G E CUR RD 2 NC A A CIT A ORW P 10 HER306G-HER308G F 1 CA GE RA E f=1.0MHz V A Vsig=50mVp-p 0 1 25 50 75 100 125 150 1 10 100 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.3 Typical Reverse CharacteristicsFig.4 Typical Forward Characteristics 100 ) 10 A) A 10 µ ( HER301G-HER304G NT NT E E T =125°C J RR UF1DLW RR 10 1 CU D CU E R HER305G A T =125°C RS T =75°C J J E ) T =25°C V 1 1 J A ORW ( 0.1 RE F OUS OUS HER306G-HER308G 0.1 NE NE A 0.01 T =25°C A T J T N N A P Puuls lsee w widt idthh 330000μμss A T T 1% duty cycle Pulse width INS 0.01 INS 0.1 0.001 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 ) A( 125 8.3ms single half sine wave NT RE UR 100 C RGE U 75 S RD A 50 ORW F K A 25 E P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2105