Datasheet PAM8408 (Diodes) - 4

PAM8408 Electrical Characteristics
(@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω (33μH)+R+L(33μH), unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage Range VDD — 2.5 — 6.0 V Quiescent Current IQ No Load — 8 — mA
D
Output Offset Voltage VOS No Load — 10 — mV
E
P MOSFET — 0.3 —
U
Drain-Source On-State Resistance RDS(ON) IDS = 0.5A Ω N MOSFET — 0.2 —
NI
R
T
THD+N = 1% L = 8Ω — 1.4 — Output Power PO W
N
f = 1kHz RL = 4Ω — 2.4 —
O
RL = 8Ω, PO = 0.85W, f = 1kHz — 0.08 —
C
Total Harmonic Distortion Plus Noise THD+N %
S
RL = 4Ω, PO = 1.75W, f = 1kHz — 0.08 —
I D
Power Supply Ripple Rejection PSRR Input AC-GND, f = 1kHz, VPP = 200mV — 70 — dB
T
Channel Separation CS PO = 1W, f = 1kHz — -95 — dB
R
Oscillator Frequency fOSC — 200 250 300 kHz
A P
PO = 1.1W, f = 1kHz, RL = 8Ω — 87 — % Efficiency η P
–
O = 2.4W, f = 1kHz, RL = 4Ω — 83 — %
E
Input A-weighting — 60 —
T
Noise Vn µV AC-GND No A-weighting — 80 —
E L
Signal Noise Ratio SNR F = 20 - 20kHz, THD = 1% — 95 — dB
O
Turn-On Time
S
ton VDD = 5V — 0.65 — S
B
Mute Current IMUTE MUTE = VDD — 4 10 mA
O
Shutdown Current ISD VSD = 0 — — 5 µA Logic Input High VIH Include SD, UP, DOWN 1.4 — — V Logic Input Low VIL Include SD, UP, DOWN — — 0.6 V Overtemperature Protection OTP — — +150 — °C Overtemperature Hysteresis OTH — — +40 — °C PAM8408 4 of 13 September 2025 Document number: DS36992 Rev. 2 - 4
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.