Datasheet JX3S0040090M (JX Semiconductor) - 5
| Manufacturer | JX Semiconductor |
| Description | 900V N-Channel SiC MOSFET in TO247-3 package |
| Pages / Page | 7 / 5 — JX3S0040090M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge … |
| File Format / Size | PDF / 573 Kb |
| Document Language | English |
JX3S0040090M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge Characteristics. Junction Temperature TJ ( C)
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JX3S0040090M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
4 20 15 3 10 2 5 1 0 0 -50 -25 0 25 50 75 100 125 150 -5
Junction Temperature TJ ( C)
0 20 40 60 80 100 Gate Charge, QG (nC)
Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 25 -10 -20 20 VGS=15V -30 VGS… -40 15 VGS=20V-50 VGS=18V -60 10 -70 -80 5 -90 -100 0 Drain-Source Voltage VDS (V) 0 100 200 300 400 500 600 700 Drain to Source Voltage, VDS (V)
Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
10000 350 CISS 300 1000 250 COSS 200 100 150 100 10 CRSS 50 1 0 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, VDS (V)
Case Temperature, TC ( C)
5 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
4 20 15 3 10 2 5 1 0 0 -50 -25 0 25 50 75 100 125 150 -5
Junction Temperature TJ ( C)
0 20 40 60 80 100 Gate Charge, QG (nC)
Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 25 -10 -20 20 VGS=15V -30 VGS… -40 15 VGS=20V-50 VGS=18V -60 10 -70 -80 5 -90 -100 0 Drain-Source Voltage VDS (V) 0 100 200 300 400 500 600 700 Drain to Source Voltage, VDS (V)
Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
10000 350 CISS 300 1000 250 COSS 200 100 150 100 10 CRSS 50 1 0 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, VDS (V)
Case Temperature, TC ( C)
5 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area