Datasheet JX3S0040090M (JX Semiconductor) - 7
| Manufacturer | JX Semiconductor |
| Description | 900V N-Channel SiC MOSFET in TO247-3 package |
| Pages / Page | 7 / 7 — JX3S0040090M. Package Drawing:. Dimensions. UNIT mm |
| File Format / Size | PDF / 573 Kb |
| Document Language | English |
JX3S0040090M. Package Drawing:. Dimensions. UNIT mm
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JX3S0040090M Package Drawing: Dimensions UNIT mm
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.90 5.00 5.10 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.90 2.00 2.10 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.96 2.02 2.07 0.079 0.080 0.081 b2 2.03 2.07 2.10 0.080 0.0815 0.083 b3 2.96 3.02 3.07 0.117 0.119 0.121 b4 3.03 3.07 3.1 0.119 0.120 0.122 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.90 21.00 21.10 0.823 0.827 0.831 D1 15.96 16.26 16.56 0.628 0.640 0.652 D2 4.3 4.3 D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 E2 4.3 0.169 L 19.72 19.92 20.12 0.776 0.784 0.792 L1 —— —— 3.86 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.55 3.60 3.70 0.140 0.142 0.146 7 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.90 5.00 5.10 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.90 2.00 2.10 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.96 2.02 2.07 0.079 0.080 0.081 b2 2.03 2.07 2.10 0.080 0.0815 0.083 b3 2.96 3.02 3.07 0.117 0.119 0.121 b4 3.03 3.07 3.1 0.119 0.120 0.122 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.90 21.00 21.10 0.823 0.827 0.831 D1 15.96 16.26 16.56 0.628 0.640 0.652 D2 4.3 4.3 D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 E2 4.3 0.169 L 19.72 19.92 20.12 0.776 0.784 0.792 L1 —— —— 3.86 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.55 3.60 3.70 0.140 0.142 0.146 7 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area