Datasheet JX0320R065MT3 (JX Semiconductor)
| Manufacturer | JX Semiconductor |
| Description | 650V N-Channel MOSFET in TO247-3 package |
| Pages / Page | 7 / 1 — JX0320R065MT3. 650V N-Channel MOSFET. Description. Features. Application. … |
| File Format / Size | PDF / 616 Kb |
| Document Language | English |
JX0320R065MT3. 650V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX0320R065MT3 650V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separate driver source pin Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging DC/DC Converters Switch Mode Power Supplies Power Factor Correction Modules Solar PV inverters
Ordering Information
Part Number Marking Package Packaging JX0320R065MT3 JX0320R065MT3 TO247-3 Tube 1 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing:
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separate driver source pin Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging DC/DC Converters Switch Mode Power Supplies Power Factor Correction Modules Solar PV inverters
Ordering Information
Part Number Marking Package Packaging JX0320R065MT3 JX0320R065MT3 TO247-3 Tube 1 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: