Datasheet JX0320R065MT3 (JX Semiconductor) - 4
| Manufacturer | JX Semiconductor |
| Description | 650V N-Channel MOSFET in TO247-3 package |
| Pages / Page | 7 / 4 — JX0320R065MT3. Electrical Characteristics Fig1. Output characteristics … |
| File Format / Size | PDF / 616 Kb |
| Document Language | English |
JX0320R065MT3. Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C)
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JX0320R065MT3 Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C)
20 14 VG =15V 12 VGS=1 5V 15 VGS=13V VGS=13V 10 VGS=11V 8 10 VGS=11V VGS=9V 6 VGS=9V 4 5 VGS=7V 2 VGS=7V 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
900 1.8 800 1.6 1.4 700 VGS =11V VGS=15V 1.2 I 600 D=2A 1 500 VGS=13V 0.8 400 0.6 V 300 GS=15V 0.4 200 0.2 100 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ(。C) Junction Temperature, TJ(。C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 oC
20 -9 -7 -5 -3 -1 18 0 TJ=25℃ 16 -1 14 VGS=-0 12 TJ=150℃ -2 10 VGS= -5V 8 -3 6 TJ=-40℃ 4 -4 2 0 -5 0 5
Gate-SourceVoltag
1
e
0
,V
15
Drain-Source Voltage V GS (V) DS (V)
4 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing:
20 14 VG =15V 12 VGS=1 5V 15 VGS=13V VGS=13V 10 VGS=11V 8 10 VGS=11V VGS=9V 6 VGS=9V 4 5 VGS=7V 2 VGS=7V 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
900 1.8 800 1.6 1.4 700 VGS =11V VGS=15V 1.2 I 600 D=2A 1 500 VGS=13V 0.8 400 0.6 V 300 GS=15V 0.4 200 0.2 100 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ(。C) Junction Temperature, TJ(。C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 oC
20 -9 -7 -5 -3 -1 18 0 TJ=25℃ 16 -1 14 VGS=-0 12 TJ=150℃ -2 10 VGS= -5V 8 -3 6 TJ=-40℃ 4 -4 2 0 -5 0 5
Gate-SourceVoltag
1
e
0
,V
15
Drain-Source Voltage V GS (V) DS (V)
4 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: