Datasheet JX0320R065MT3 (JX Semiconductor) - 6
| Manufacturer | JX Semiconductor |
| Description | 650V N-Channel MOSFET in TO247-3 package |
| Pages / Page | 7 / 6 — JX0320R065MT3. Fig13. Switching Energy vs. Drain Current. Fig14. … |
| File Format / Size | PDF / 616 Kb |
| Document Language | English |
JX0320R065MT3. Fig13. Switching Energy vs. Drain Current. Fig14. Switching Energy vs. RG(ext). VGS=-3/. GS=-3 /+15 V. +15 V
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JX0320R065MT3 Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
40 70
V VGS=-3/ GS=-3 /+15 V +15 V
E 35
V
total
DS = 4 00V VDS=4 00V
Etotal 60
L=1.5m L=1.5m
Eon 30
ID=2A RG(ext)=2Ω
Eoff 50 25 40 20 30 15 10 20 5 Eon 10 Eoff 0 0 2 4 6 8 10 0
Drain to Source Current, I
0 5 10 15 20 25
DS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
70 12
V V GS=-3 /+15 V GS=-3/+15 V
60
VDS =4 0V VDS = 4 00V
10
L=1.5 mH L=1.5m
Eon
ID=2A
tf 50
ID=2A
8 tdof f t… 40 tr 6 30 4 20 10 2 Eoff 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25
Junction Temperature, TJ (。C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1.E+0 10 0. 10us 0. 1 1.E-1 0. 1ms 0.05 0.02 0.1 100 s 0.0 SinglePu se 1.E-05 1.E-04 Time, tp (s) 1.E-02 1.E-01 1.E+00 0.01 0.1 1 10 100 1000
Drain-Source Voltage, VDS (V)
6 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing:
40 70
V VGS=-3/ GS=-3 /+15 V +15 V
E 35
V
total
DS = 4 00V VDS=4 00V
Etotal 60
L=1.5m L=1.5m
Eon 30
ID=2A RG(ext)=2Ω
Eoff 50 25 40 20 30 15 10 20 5 Eon 10 Eoff 0 0 2 4 6 8 10 0
Drain to Source Current, I
0 5 10 15 20 25
DS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
70 12
V V GS=-3 /+15 V GS=-3/+15 V
60
VDS =4 0V VDS = 4 00V
10
L=1.5 mH L=1.5m
Eon
ID=2A
tf 50
ID=2A
8 tdof f t… 40 tr 6 30 4 20 10 2 Eoff 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25
Junction Temperature, TJ (。C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1.E+0 10 0. 10us 0. 1 1.E-1 0. 1ms 0.05 0.02 0.1 100 s 0.0 SinglePu se 1.E-05 1.E-04 Time, tp (s) 1.E-02 1.E-01 1.E+00 0.01 0.1 1 10 100 1000
Drain-Source Voltage, VDS (V)
6 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: