Datasheet JX4S0150R330M (JX Semiconductor) - 3

JX4S0150R330M Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 3088 pF VDS=1000V,f=1MHZ , Coss Output Capacitance 55 pF VAC=25mV Crss Reverse Transfer Capacitance 4.9 pF EOSS COSS Stored Energy VDS=1000V,f=1MHZ 32 μJ EON Turn-On Energy（Body Diode） 433 μJ VDS=1700V,VGS=-5/20V， EOFF Turn-Off Energy（Body Diode） ID=15A,L=150uH TJ=25℃ 132 μJ Qg Total Gate Charge 128 nC VDS=1000V, VGS=- Qgs Gate-source Charge 39 nC 5V/20V, ID = 15 A Qgd Gate-Drain Charge 42 nC RG e f=1MH （int） Internal Gate Resistanc Z,VAC=25mV 2 Ω td(on) Turn-on Delay Time 7 VDS=1700V,VGS=- 9 ns tr Rise Time 5V/20V,ID =15A, L=150μ 27 ns td(off) Turn-of Delay Time H Rext=8Ω 31 ns tf Fal Time 19 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=7.5A,TJ=25。C 4.2 6 V VFSD Forward Voltage VGS=0V,IF=7.5A,TJ=175。C 3.6 6 V Is Continuous Diode Forward Current VGS=0V，TC=25。C 27 A trr Reverse Recovery Time VGS=-5 V, IF=15 A, 75 ns Qrr Reverse Recovery Charge V 332 nC R=1700 V, TJ=25。C Irrm Peak Reverse Recovery Current di/dt= 500 A/μs 7 A
Thermal Characteristics
Symbol Parameter Value. Unit RθJC Thermal Resistance, Junction-to-Case 0.42 。C/W RθJA Thermal Resistance, Junction-to-Ambient 1.45 。C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=175℃ 3 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance