Datasheet JX3S0750170M (JX Semiconductor) - 4
| Manufacturer | JX Semiconductor |
| Description | 1700V SiC N-Channel MOSFET in TO-247 package |
| Pages / Page | 8 / 4 — JX3S0750170M. Electrical Characteristics Fig1. Output characteristics (TJ … |
| File Format / Size | PDF / 631 Kb |
| Document Language | English |
JX3S0750170M. Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C)
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Text Version of Document
JX3S0750170M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C)
5 3 4 VGS=15V VGS=12V VGS=1 2V VGS=15V 2 3 VGS=10V VGS=1 0V 2 VGS=8V VGS=8V 1 1 VGS=6V VGS=6V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 1600 1.8 1400 1.6 1200 1.4 1.2 1000 VGS=10V 1 800 0.8 VGS=12V 600 0.6 VGS=15V 0.4 400 0.2 200 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T Junction Temperature, TJ(
°
C) J (
°
C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25
º
C
-6 -5 -4 -3 -2 -1 0 5 0 4 -1 TJ=175℃ TJ =25℃ 3 VGS=0V -2 VGS= -5V TJ =-40℃ 2 -3 1 -4 0 -5 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00
Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V)
4 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
5 3 4 VGS=15V VGS=12V VGS=1 2V VGS=15V 2 3 VGS=10V VGS=1 0V 2 VGS=8V VGS=8V 1 1 VGS=6V VGS=6V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 1600 1.8 1400 1.6 1200 1.4 1.2 1000 VGS=10V 1 800 0.8 VGS=12V 600 0.6 VGS=15V 0.4 400 0.2 200 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T Junction Temperature, TJ(
°
C) J (
°
C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25
º
C
-6 -5 -4 -3 -2 -1 0 5 0 4 -1 TJ=175℃ TJ =25℃ 3 VGS=0V -2 VGS= -5V TJ =-40℃ 2 -3 1 -4 0 -5 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00
Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V)
4 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area