Datasheet JX3S0750170M (JX Semiconductor) - 5
| Manufacturer | JX Semiconductor |
| Description | 1700V SiC N-Channel MOSFET in TO-247 package |
| Pages / Page | 8 / 5 — JX3S0750170M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge … |
| File Format / Size | PDF / 631 Kb |
| Document Language | English |
JX3S0750170M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge Characteristics. Gate Charge, Q
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JX3S0750170M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
3 12 2.5 9 2 6 1.5 3 1 0 0.5 0 -3 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8
Gate Charge, Q Junction Temperature TJ ( G (nC)
°
C) Fig9. 3rd Quadrant Characteristic at 25
º
C Fig10. Output Capacitor Stored Energy
-6 -5 -4 -3 -2 -1 0 0 3 VGS=0V -1 VGS=5V VGS=12V 2 -2 VGS=15V -3 1 -4 0 -5 0 200 400 600 800 1000
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
1000 70 Ciss 60 100 50 40 10 Coss 30 20 1 Crss 10 0.1 0 0 200 400 600 800 1000 -50 -25 0 25 50 75 1 0 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
3 12 2.5 9 2 6 1.5 3 1 0 0.5 0 -3 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8
Gate Charge, Q Junction Temperature TJ ( G (nC)
°
C) Fig9. 3rd Quadrant Characteristic at 25
º
C Fig10. Output Capacitor Stored Energy
-6 -5 -4 -3 -2 -1 0 0 3 VGS=0V -1 VGS=5V VGS=12V 2 -2 VGS=15V -3 1 -4 0 -5 0 200 400 600 800 1000
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
1000 70 Ciss 60 100 50 40 10 Coss 30 20 1 Crss 10 0.1 0 0 200 400 600 800 1000 -50 -25 0 25 50 75 1 0 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area