Datasheet JX3S0750170M (JX Semiconductor) - 6

JX3S0750170M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
140 100
VDS=1200V,VGS=-3/12V
， 90
VDS=1200V,VGS=-3/12V
， 120
I I D=2A
，
L=1mH D=2A
，
L=1mH
80 Etotal 100 Etotal 70 60 80 Eon 50 60 Eon 40 40 30 Eoff Eoff 20 20 10 0 0 0.00 2.00 4.00 6.00 8.00 10.00
Drain to Source Current, I
25.00 30.00 35.00 40.00 45.00 50.00
DS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
90 18 80
VDS=1200V,VGS=-3/12V
， 16
ID=2A
，
L=1mH
70 14 tdoo f 60 12 tr 50 10 tf 40 8 30 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 25 3
E
0 50
Junction Temperature, T xternal Ga Resistor R
4
(ext) (Ohm )
5
J (
°
C) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
10 0.5 0.3 10us 0.1 1 0.05 100us 0.02 0.01 1ms 0.1 SinglePulse 100ms 0.01 0.1 1 10 100 1000 Time, tp (s)
Drain-Source Voltage, VDS (V)
6 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area