Datasheet JX3S0020120M (JX Semiconductor) - 4

JX3S0020120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance
250 250
VGS=20V VGS=20V VGS=18V VGS=16V V
200
GS=18V
200
VGS=16V V
150
GS=12V
150
VGS=12V
100 100
VGS=8V VGS=8V
50 50 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 1 Figure 2
Output Characteristics (TJ=25 °C) Output Characteristics (TJ=175°C) 2 35 1.8 30 1.6 1.4 25
VGS= 15V
1.2 20
VGS= 18V
1 0.8 15
VGS= 20V
0.6 10 0.4 5 0.2 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Figure 3 Figure 4
Normalized On-Resistance vs. Temperature On-Resistance vs. Temperature
Product Data Sheet
4
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info