Datasheet JX3S0020120M (JX Semiconductor) - 5
| Manufacturer | JX Semiconductor |
| Description | 1200V, 100A, 16Ohm, N-Channel, Silicon Carbide MOSFET in TO-247-3L package |
| Pages / Page | 10 / 5 — JX3S0020120M. 1200V, N.Channel, Silicon Carbide MOSFET. Typical … |
| File Format / Size | PDF / 700 Kb |
| Document Language | English |
JX3S0020120M. 1200V, N.Channel, Silicon Carbide MOSFET. Typical Performance. VGS=-5V. TJ =175℃. VGS=-2V. TJ= 25℃. VGS=0V. TJ =-50℃
Model Line for this Datasheet
Text Version of Document
JX3S0020120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance
250 -10 -8 -6 -4 -2 0 0
VGS=-5V
200 -50
TJ =175℃ VGS=-2V
150 -100
TJ= 25℃ VGS=0V
100 -150
TJ =-50℃
50 -200 0 0 2 4 6 8 10 12 -250
Gate-Source Voltage, V Drain-Source Voltage, V GS (V ) DS (V) Figure 5 Figure 6
Transfer Characteristic Body Diode Characteristic at 25°C 4 20 3.5 15 3 2.5 10 2 5 1.5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250
Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7 Figure 8
Threshold Voltage vs. Temperature Gate Charge Characteristics
Product Data Sheet
5
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info
250 -10 -8 -6 -4 -2 0 0
VGS=-5V
200 -50
TJ =175℃ VGS=-2V
150 -100
TJ= 25℃ VGS=0V
100 -150
TJ =-50℃
50 -200 0 0 2 4 6 8 10 12 -250
Gate-Source Voltage, V Drain-Source Voltage, V GS (V ) DS (V) Figure 5 Figure 6
Transfer Characteristic Body Diode Characteristic at 25°C 4 20 3.5 15 3 2.5 10 2 5 1.5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250
Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7 Figure 8
Threshold Voltage vs. Temperature Gate Charge Characteristics
Product Data Sheet
5
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info