Datasheet JX3S0020120M (JX Semiconductor) - 6

JX3S0020120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance
-8 -6 -4 -2 0 200 0 180
VGS=0V
160 -50 140
VGS=15V
120 -100 100
VGS=18V
80 -150 60
VGS=20 V
40 -200 20 0 0 200 400 600 800 1000 1200 -250
Drain-Source Voltage, V Drain to Source Voltage, V DS (V) DS (V) Figure 9 Figure 10
3rd Quadrant Characteristic at 25°C Output Capacitor Stored Energy 100000 600 500 10000
Ciss
400 1000
Coss
300 100 200
Crss
10 100 1 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 11 Figure 12
Capacitances vs. Drain-source Max Power Dissipation Derating vs TC
Product Data Sheet
6
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info