Datasheet JX3S0040120M (JX Semiconductor) - 2
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 2 — JX3S0040120M. Absolute Maximum Ratings(Tc=25 ). Symbol Parameter. Value. … |
| File Format / Size | PDF / 568 Kb |
| Document Language | English |
JX3S0040120M. Absolute Maximum Ratings(Tc=25 ). Symbol Parameter. Value. Unit
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JX3S0040120M Absolute Maximum Ratings(Tc=25 ) Symbol Parameter Value Unit
VDS Drain-Source Voltage 1200 V ID Drain Current(continuous)at Tc=25C 60 A ID Drain Current(continuous)at Tc=100C 48 A IDM Drain Current (pulsed) 100 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation TC = 25°C 325 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 C
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 1200 V VDS =1200V, IDSS Zero Gate Voltage Drain Current 100 uA VGS=0V, TJ=25C V I DS =0V ; VGS =-10 to GSS Gate-body Leakage Current 20V 250 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=10mA 2 3 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-off Voltage -5 V VGS=20V, ID=20A 45 52 mΩ RDS(on) Static Drain-source On Resistance VGS=20V, ID=20A 72 mΩ TJ=15 0C 2 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
VDS Drain-Source Voltage 1200 V ID Drain Current(continuous)at Tc=25C 60 A ID Drain Current(continuous)at Tc=100C 48 A IDM Drain Current (pulsed) 100 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation TC = 25°C 325 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 C
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 1200 V VDS =1200V, IDSS Zero Gate Voltage Drain Current 100 uA VGS=0V, TJ=25C V I DS =0V ; VGS =-10 to GSS Gate-body Leakage Current 20V 250 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=10mA 2 3 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-off Voltage -5 V VGS=20V, ID=20A 45 52 mΩ RDS(on) Static Drain-source On Resistance VGS=20V, ID=20A 72 mΩ TJ=15 0C 2 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area