Datasheet JX3S0040120M (JX Semiconductor) - 3
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 3 — JX3S0040120M. Typical Performance-Dynamic. Symbol. Parameter. Test … |
| File Format / Size | PDF / 568 Kb |
| Document Language | English |
JX3S0040120M. Typical Performance-Dynamic. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
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JX3S0040120M Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 3239 pF VDS=1000V,f=100kHZ , Coss Output Capacitance 112 pF VAC=25mV Crss Reverse Transfer Capacitance 6 pF gfs Transconductance VDS=20V , ID=20A 23 S EOSS COSS Stored Energy VDS=1000V,f=100kHZ 63 μJ EON Turn-On Energy (Body Diode) VDS=800V,VGS=-5/20V， 1695 μJ ID=20A ，L=100uH EOFF Turn-Of Energy (Body Diode) TJ=15 0C 306 μJ Qg Total Gate Charge 125 nC VDS=800V, VGS=-5V/20V, Qgs Gate-source Charge 32 nC ID = 20A Qgd Gate-Drain Charge 33 nC RG (int) Internal Gate Resistance f=1MHz,VAC=25mV 3.5 Ω td(on) Turn-on Delay Time V 17 DS=800V,VGS=-5V/20V, ns tr Rise Time ID =20A, L=100 μH 66 ns td(off) Turn-off Delay Time Rext=2.5Ω 28 ns tf Fal Time 14 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=20A,TJ=25C 5 6 V VFSD Forward Voltage VGS=0V,IF=20A,TJ=150C 4.5 6 V Is Continuous Diode Forward Current VGS=0V ，TC=25C 55 A trr Reverse Recovery Time VGS=-5 V, IF=20 A, 50 nS Qrr Reverse Recovery Charge VR=800 V, di/dt=900 712 nC A/μs ，TJ=150C Irrm Peak Reverse Recovery Current 19 A
Thermal Characteristics
Symbol Parameter Value. Unit R JC Thermal Resistance, Junction-to-Case 0.38 C/W R JA Thermal Resistance, Junction-to-Ambient 40 C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150C 3 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
Ciss Input Capacitance 3239 pF VDS=1000V,f=100kHZ , Coss Output Capacitance 112 pF VAC=25mV Crss Reverse Transfer Capacitance 6 pF gfs Transconductance VDS=20V , ID=20A 23 S EOSS COSS Stored Energy VDS=1000V,f=100kHZ 63 μJ EON Turn-On Energy (Body Diode) VDS=800V,VGS=-5/20V， 1695 μJ ID=20A ，L=100uH EOFF Turn-Of Energy (Body Diode) TJ=15 0C 306 μJ Qg Total Gate Charge 125 nC VDS=800V, VGS=-5V/20V, Qgs Gate-source Charge 32 nC ID = 20A Qgd Gate-Drain Charge 33 nC RG (int) Internal Gate Resistance f=1MHz,VAC=25mV 3.5 Ω td(on) Turn-on Delay Time V 17 DS=800V,VGS=-5V/20V, ns tr Rise Time ID =20A, L=100 μH 66 ns td(off) Turn-off Delay Time Rext=2.5Ω 28 ns tf Fal Time 14 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=20A,TJ=25C 5 6 V VFSD Forward Voltage VGS=0V,IF=20A,TJ=150C 4.5 6 V Is Continuous Diode Forward Current VGS=0V ，TC=25C 55 A trr Reverse Recovery Time VGS=-5 V, IF=20 A, 50 nS Qrr Reverse Recovery Charge VR=800 V, di/dt=900 712 nC A/μs ，TJ=150C Irrm Peak Reverse Recovery Current 19 A
Thermal Characteristics
Symbol Parameter Value. Unit R JC Thermal Resistance, Junction-to-Case 0.38 C/W R JA Thermal Resistance, Junction-to-Ambient 40 C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150C 3 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area