Datasheet JX3S0040120M (JX Semiconductor) - 7
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 7 — JX3S0040120M. Package Drawing:. Dimensions. UNIT mm |
| File Format / Size | PDF / 568 Kb |
| Document Language | English |
JX3S0040120M. Package Drawing:. Dimensions. UNIT mm
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JX3S0040120M Package Drawing: Dimensions UNIT mm
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.90 5.00 5.10 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.90 2.00 2.10 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.96 2.02 2.07 0.079 0.080 0.081 b2 2.03 2.07 2.10 0.080 0.0815 0.083 b3 2.96 3.02 3.07 0.117 0.119 0.121 b4 3.03 3.07 3.1 0.119 0.120 0.122 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.90 21.00 21.10 0.823 0.827 0.831 D1 15.96 16.26 16.56 0.628 0.640 0.652 D2 4.3 4.3 D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 E2 4.3 0.169 L 19.72 19.92 20.12 0.776 0.784 0.792 L1 —— —— 3.86 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.55 3.60 3.70 0.140 0.142 0.146 7 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.90 5.00 5.10 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.90 2.00 2.10 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.96 2.02 2.07 0.079 0.080 0.081 b2 2.03 2.07 2.10 0.080 0.0815 0.083 b3 2.96 3.02 3.07 0.117 0.119 0.121 b4 3.03 3.07 3.1 0.119 0.120 0.122 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.90 21.00 21.10 0.823 0.827 0.831 D1 15.96 16.26 16.56 0.628 0.640 0.652 D2 4.3 4.3 D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 E2 4.3 0.169 L 19.72 19.92 20.12 0.776 0.784 0.792 L1 —— —— 3.86 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.55 3.60 3.70 0.140 0.142 0.146 7 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area