Datasheet JX4S0020120M (JX Semiconductor)
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 1 — JX4S0020120M. 1200V N-Channel MOSFET. Description. Features. Application. … |
| File Format / Size | PDF / 636 Kb |
| Document Language | English |
JX4S0020120M. 1200V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX4S0020120M 1200V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separate driver source pin Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV motor drive High Voltage DC/DC Converters Switch Mode Power Supplies Solar inverters EV charging
Ordering Information
Part Number Marking Package Packaging JX4S0020120M JX4S0020120M TO-247 Tube 1 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separate driver source pin Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV motor drive High Voltage DC/DC Converters Switch Mode Power Supplies Solar inverters EV charging
Ordering Information
Part Number Marking Package Packaging JX4S0020120M JX4S0020120M TO-247 Tube 1 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area