Datasheet JX4S0020120M (JX Semiconductor) - 2
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 2 — JX4S0020120M. Absolute Maximum Ratings(Tc=25 ). Symbol Parameter. Value. … |
| File Format / Size | PDF / 636 Kb |
| Document Language | English |
JX4S0020120M. Absolute Maximum Ratings(Tc=25 ). Symbol Parameter. Value. Unit. Electrical Characteristics(TJ = 25
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JX4S0020120M Absolute Maximum Ratings(Tc=25 ) Symbol Parameter Value Unit
VDS Drain-Source Voltage 1200 V ID Drain Current(continuous)at Tc=25℃ 115 A ID Drain Current(continuous)at Tc=100℃ 85 A IDM Drain Current (pulsed) 250 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation TC = 25°C 550 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 ℃
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 1200 V V I DS =1200V, DSS Zero Gate Voltage Drain Current 5 100 uA VGS =0V, TJ=25 C I VDS =0V ; VGS =-10 to GSS Gate-body Leakage Current 20V 10 250 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=22mA 2 3 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-off Voltage -5 V VGS=20V, ID=50A 16 22 mΩ RDS(on) Static Drain-source On Resistance VGS=20V, ID=50A 25.2 mΩ TJ=150℃ 2 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
VDS Drain-Source Voltage 1200 V ID Drain Current(continuous)at Tc=25℃ 115 A ID Drain Current(continuous)at Tc=100℃ 85 A IDM Drain Current (pulsed) 250 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation TC = 25°C 550 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 ℃
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 1200 V V I DS =1200V, DSS Zero Gate Voltage Drain Current 5 100 uA VGS =0V, TJ=25 C I VDS =0V ; VGS =-10 to GSS Gate-body Leakage Current 20V 10 250 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=22mA 2 3 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-off Voltage -5 V VGS=20V, ID=50A 16 22 mΩ RDS(on) Static Drain-source On Resistance VGS=20V, ID=50A 25.2 mΩ TJ=150℃ 2 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area