Datasheet JX4S0020120M (JX Semiconductor) - 4
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 4 — JX4S0020120M. Electrical Characteristics. Fig1. Output characteristics … |
| File Format / Size | PDF / 636 Kb |
| Document Language | English |
JX4S0020120M. Electrical Characteristics. Fig1. Output characteristics (TJ = 25 °C)
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JX4S0020120M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C)
250 60 V VGS =20V GS=2 0V V GS=18V VGS=16V 200 50 VGS=18V VGS=16V 40 150 VGS=12 V VGS=12V 30 100 VGS=8V 20 VGS=8V 50 10 0 0 0 2 4 6 8 10 12
Drain-Source Voltage, VDS (V)
0 2 4 6 8 10
Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 40 1.8 35 1.6 30 1.4 VGS=15V 25 1.2 VGS =18V 1 20 VGS= 20V 0.8 15 0.6 10 0.4 5 0.2 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature,TJ ( C) Junction Temperature,TJ ( C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
-10 -8 -6 -4 -2 0 250 0 VGS=-2V 200 GS 0V -50 V = VGS =-5V 150 -100 TJ=150 TJ = 100 ℃ … -150 TJ=50 50 -200 ℃ 0 -250 0 2 4 6 8 10 12
Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V)
4 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
250 60 V VGS =20V GS=2 0V V GS=18V VGS=16V 200 50 VGS=18V VGS=16V 40 150 VGS=12 V VGS=12V 30 100 VGS=8V 20 VGS=8V 50 10 0 0 0 2 4 6 8 10 12
Drain-Source Voltage, VDS (V)
0 2 4 6 8 10
Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 40 1.8 35 1.6 30 1.4 VGS=15V 25 1.2 VGS =18V 1 20 VGS= 20V 0.8 15 0.6 10 0.4 5 0.2 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature,TJ ( C) Junction Temperature,TJ ( C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
-10 -8 -6 -4 -2 0 250 0 VGS=-2V 200 GS 0V -50 V = VGS =-5V 150 -100 TJ=150 TJ = 100 ℃ … -150 TJ=50 50 -200 ℃ 0 -250 0 2 4 6 8 10 12
Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V)
4 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area