Datasheet JX4S0020120M (JX Semiconductor) - 7
| Manufacturer | JX Semiconductor |
| Description | 1200V N-Channel SiC MOSFET in TO-247 package |
| Pages / Page | 7 / 7 — JX4S0020120M. Package Drawing:. Dimensions. UNIT mm |
| File Format / Size | PDF / 636 Kb |
| Document Language | English |
JX4S0020120M. Package Drawing:. Dimensions. UNIT mm
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JX4S0020120M Package Drawing: Dimensions UNIT mm
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.9 5 5.1 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.9 2 2.1 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.15 1.2 1.25 0.045 0.047 0.049 b2 2.61 2.76 2.91 0.103 0.109 0.115 b3 1.36 1.42 1.47 0.054 0.056 0.058 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.9 21 21.1 0.823 0.827 0.831 D1 15.94 16.24 16.54 0.628 0.639 0.651 D2 5 0.197 TYP D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.08 BSC 0.200 BSC e1 2.54 BSC 0.100BSC E 16.05 16.15 16.25 0.632 0.636 0.640 E1 13.82 14.02 14.26 0.544 0.552 0.561 L 19.75 19.95 20.15 0.778 0.785 0.793 L1 —— —— 3.87 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.45 3.6 3.75 0.136 0.142 0.148 7 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.9 5 5.1 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.9 2 2.1 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.15 1.2 1.25 0.045 0.047 0.049 b2 2.61 2.76 2.91 0.103 0.109 0.115 b3 1.36 1.42 1.47 0.054 0.056 0.058 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.9 21 21.1 0.823 0.827 0.831 D1 15.94 16.24 16.54 0.628 0.639 0.651 D2 5 0.197 TYP D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.08 BSC 0.200 BSC e1 2.54 BSC 0.100BSC E 16.05 16.15 16.25 0.632 0.636 0.640 E1 13.82 14.02 14.26 0.544 0.552 0.561 L 19.75 19.95 20.15 0.778 0.785 0.793 L1 —— —— 3.87 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.45 3.6 3.75 0.136 0.142 0.148 7 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area