Datasheet JX3S0080120M (JX Semiconductor) - 5

JX3S0080120M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
4 20 3.5 15 3 2.5 10 2 1.5 5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 50 0 -10 40 VGS=0V -20 VGS=15V 30 -30 -40 20 -50 VGS=18V -60 VGS=20V 10 -70 0 -80 0 200 400 600 800 1000 1200
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
10000 160 140 CISS 1000 120 100 100 80 COSS 60 10 40 Crss 20 1 0 0 200 400 600 800 1000 1200 -50 -30 -10 10 30 50 70 90 110 130 150 170
Drain- Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area