Datasheet BF862 (NXP) - 2
| Manufacturer | NXP |
| Description | N-channel junction FET |
| Pages / Page | 11 / 2 — NXP Semiconductors. Product specification. N-channel junction FET. BF862. … |
| File Format / Size | PDF / 239 Kb |
| Document Language | English |
NXP Semiconductors. Product specification. N-channel junction FET. BF862. FEATURES. PINNING SOT23. PIN. DESCRIPTION. APPLICATIONS
Model Line for this Datasheet
Text Version of Document
NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23
High transition frequency for excellent sensitivity in
PIN DESCRIPTION
AM car radios 1 source High transfer admittance. 2 drain 3 gate
APPLICATIONS
Pre-amplifiers in AM car radios. handbook, halfpage 2 1
DESCRIPTION
Silicon N-channel symmetrical junction field-effect d g transistor in a SOT23 package. Drain and source are s interchangeable. 3 Top view MAM036
Marking code
: 2Ap. Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 20 V VGSoff gate-source cut-off voltage 0.3 0.8 1.2 V IDSS drain-source current 10 25 mA P tot total power dissipation Ts 90 C 300 mW y fs transfer admittance 35 45 mS Tj junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
High transition frequency for excellent sensitivity in
PIN DESCRIPTION
AM car radios 1 source High transfer admittance. 2 drain 3 gate
APPLICATIONS
Pre-amplifiers in AM car radios. handbook, halfpage 2 1
DESCRIPTION
Silicon N-channel symmetrical junction field-effect d g transistor in a SOT23 package. Drain and source are s interchangeable. 3 Top view MAM036
Marking code
: 2Ap. Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 20 V VGSoff gate-source cut-off voltage 0.3 0.8 1.2 V IDSS drain-source current 10 25 mA P tot total power dissipation Ts 90 C 300 mW y fs transfer admittance 35 45 mS Tj junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
