Datasheets - Schottky Diodes & Rectifiers - 4

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61. SB560L_R2_00001 — Datasheet PanJit
    Diodes - Rectifiers Single PanJit SB560L SB560L_R2_00001
    Schottky Diodes & Rectifiers PanJit SB560L
    Low Vf Schottky Barrier Rectifiers
62. RB751V40 — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor RB751V40
    30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...

63. BAT42 — Datasheet STMicroelectronics
    Diodes - Rectifiers Single STMicroelectronics BAT42
    Schottky Diodes & Rectifiers STMicroelectronics BAT42
    30 V, 200 mA Axial General purpose Signal Schottky Diode General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharge
64. BAT43 — Datasheet STMicroelectronics
    Diodes - Rectifiers Single STMicroelectronics BAT43
    Schottky Diodes & Rectifiers STMicroelectronics BAT43
    30 V, 200 mA Axial General purpose Signal Schottky Diode General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharge
65. MBR0520L — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBR0520L
    Schottky Power Rectifier, Surface Mount, 0.5 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. It is ideally suited for low voltage, high ...
66. BAT85 — Datasheet NXP
    Schottky Diodes & Rectifiers NXP BAT85
    Schottky barrier single diode Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
67. BAT49 — Datasheet STMicroelectronics
    Schottky Diodes & Rectifiers STMicroelectronics BAT49
    Small Signal Schottky Diode
68. MBR2030CTL — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBR2030CTL
    Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
69. MBR340G — Datasheet ON Semiconductor
    Diodes - Rectifiers Single ON Semiconductor MBR340 MBR340G
    Schottky Diodes & Rectifiers ON Semiconductor MBR340
    Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
70. MBRS330P — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBRS330P
    Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
71. MBRS340P — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBRS340P
    Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
72. MBRS320PT3G — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBRS320P MBRS320PT3G
    Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
73. MBRS2040LT3 — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBRS2040L MBRS2040LT3
    Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
74. VS-15TQ060-M3 — Datasheet Vishay
    Diodes - Rectifiers Single Vishay VS-15TQ060-M3
    Schottky Diodes & Rectifiers Vishay VS-15TQ060-M3
    High Performance Schottky Rectifier, 15 A The VS-15TQ060.. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction ...
75. 5082-2303 — Datasheet Avago Technologies
    Schottky Diodes & Rectifiers Avago Technologies 5082-2300 5082-2303
    Schottky Barrier Diodes for General Purpose Applications
76. 1N5712 — Datasheet Avago Technologies
    Schottky Diodes & Rectifiers Avago Technologies 1N5712
    Schottky Barrier Diodes for General Purpose Applications
77. 1N5711 — Datasheet Avago Technologies
    Schottky Diodes & Rectifiers Avago Technologies 1N5711
    Schottky Barrier Diodes for General Purpose Applications
78. MBR2090CT — Datasheet Vishay
    Schottky Diodes & Rectifiers Vishay MBR2090CT
    Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
79. MBR20100CT — Datasheet Vishay
    Schottky Diodes & Rectifiers Vishay MBR20100CT
    Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
80. MBRM120LT1 — Datasheet ON Semiconductor
    Schottky Diodes & Rectifiers ON Semiconductor MBRM120L MBRM120LT1
    1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...